SI7113DN-T1-GE3
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Краткое описание:
P-CH MOSFET 100V 3.5A 134mR SMT PowerPAK
Дополнительная информация
P-channel MOSFET with 100V drain-source voltage and 3.5A continuous drain current. Features low 134mΩ drain-source on-resistance and 1.04mm height. Operates from -50°C to 150°C with a maximum power dissipation of 52W. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. Includes 30ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.04mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Packaging | Tape and Reel |
| Rds On Max | 134mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.48nF |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 51ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 134mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 134mR |
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