SI7114DN-T1-E3
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Краткое описание:
N-Ch MOSFET, 30V, 7.5mR, 11.7A, Surface Mount
Дополнительная информация
Single N-Channel Power MOSFET featuring 30V drain-source voltage and a low 7.5mΩ maximum drain-source on-resistance. This surface mount device offers a continuous drain current of 11.7A and a maximum power dissipation of 1.5W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on and fall times of 10ns and 45ns turn-off delay. Packaged in a compact 3.05mm x 3.05mm x 1.04mm PowerPAK 1212-8, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.5mR |
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