SI7115DN-T1-E3

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SI7115DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 150V 2.3A 295mR Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerPAK 1212 MOSFET with 150V Vdss and 2.3A continuous drain current. Features low 295mR Rds On, 52W max power dissipation, and 1.19nF input capacitance. Operates from -50°C to 150°C with fast switching times including 11ns turn-on delay and 35ns fall time. Surface mountable, lead-free, and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 35ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 295mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.19nF
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 52ns
Max Power Dissipation 52W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 295mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.3A
Drain to Source Voltage (Vdss) 150V

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