SI7116DN-T1-E3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 40V 10.5A 7.8mR TrenchFET PowerPAK
Дополнительная информация
N-channel MOSFET with 40V drain-source voltage and 10.5A continuous drain current. Features low 7.8mΩ drain-source on-resistance and 1.5W power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant with fast switching times including 10ns turn-on delay and 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 7.8mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
