SI7120ADN-T1-GE3
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Краткое описание:
MOSFET N-CH 60V 6A 1212-8 PPAK
Дополнительная информация
MOSFET N-CH 60V 6A 1212-8 PPAK
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 60V |
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