SI7121DN-T1-GE3
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Краткое описание:
P-CH MOSFET -30V, 10.6A, 18mR, SMT
Дополнительная информация
P-channel MOSFET featuring a 30V drain-source voltage and 10.6A continuous drain current. Offers a low 18mΩ maximum drain-source on-resistance. Designed for surface mounting with a compact 3.05mm x 3.05mm x 1.04mm package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 52W. Includes fast switching characteristics with turn-on delay of 44ns and fall time of 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | -3V |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.96nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 44ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 18mR |
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