SI7135DP-T1-GE3
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Краткое описание:
P-CH MOSFET -30V, 3.9mR RdsOn, 60A ID, SOIC
Дополнительная информация
P-Channel MOSFET with -30V Drain-Source Voltage (Vdss) and -60A Continuous Drain Current (ID). Features low 3.9mR Max Drain-Source On Resistance (Rds On) and 5mR Drain to Source Resistance. Operates with a Gate to Source Voltage (Vgs) up to 20V and a nominal Vgs of -3V. This surface mount component is housed in an 8-pin SOIC package, offering a Max Power Dissipation of 104W and a Max Operating Temperature of 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.9mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.65nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 110ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -60A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 3.9mR |
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