SI7137DP-T1-GE3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 20V 42A 1.95mR Surface Mount
Дополнительная информация
P-channel MOSFET with 20V drain-source voltage and 42A continuous drain current. Features low 1.95mΩ drain-source on-resistance and 104W maximum power dissipation. Surface mountable in an 8-pin PowerPAK SO package, this component offers fast switching with turn-on delay of 100ns and fall time of 110ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.15mm |
| Height | 1.04mm |
| Length | 6.15mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.95mR |
| Nominal Vgs | -1.4V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 20nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 100ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 230ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.95mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 1.95mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
