SI7139DP-T1-GE3
Производится
Увеличить
Краткое описание:
P-CHANNEL MOSFET, -30V, 40A, 5.5mR, Surface Mount
Дополнительная информация
The SI7139DP-T1-GE3 is a P-channel MOSFET with a maximum drain to source voltage of -30V and a continuous drain current of -40A. It features a drain to source resistance of 4.2mR and a maximum power dissipation of 48W. Operating temperature range is from -55°C to 150°C. The device is RoHS compliant and lead free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.23nF |
| Threshold Voltage | -1.2V |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -40A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 5.5mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
