SI7141DP-T1-GE3
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Краткое описание:
P-CH MOSFET, -20V, -60A, 1.9mR, Surface Mount
Дополнительная информация
P-Channel MOSFET, 20V Vds, -60A continuous drain current, and 1.9mΩ maximum drain-source on-resistance. Features a 1.12mm height, surface mount design, and 104W maximum power dissipation. Operates from -55°C to 150°C, with 14.3nF input capacitance and 1.9mΩ Rds On Max. This RoHS compliant component is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.12mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 14.3nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 130ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -60A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 1.9mR |
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