SI7145DP-T1-GE3
Производится
Увеличить
Краткое описание:
P-CH MOSFET, -30V, -60A, 2.6mR, PowerPAK SO
Дополнительная информация
P-channel MOSFET featuring a 30V drain-source voltage and 36.5A continuous drain current. Offers a low 2.6mΩ drain-source on-resistance and 104W maximum power dissipation. This surface-mount component operates from -55°C to 150°C and is packaged in a Tape and Reel format. Key electrical characteristics include a 43ns fall time and 15.66nF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 43ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.6mR |
| Nominal Vgs | -2.3V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 15.66nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | -2.3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 125ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 107ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -60A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 2.6mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
