SI7149ADP-T1-GE3
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Краткое описание:
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
Дополнительная информация
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.125nF |
| Threshold Voltage | -2.5V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 58ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.2mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | -50A |
| Drain to Source Voltage (Vdss) | -30V |
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