SI7172DP-T1-GE3
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Краткое описание:
200V 25A N-CH MOSFET SOIC 70mR 9ns Fall
Дополнительная информация
N-channel MOSFET featuring 200V Drain-Source Voltage (Vdss) and 25A Continuous Drain Current (ID). Offers a low Drain-Source On-Resistance (Rds On) of 70mR. Designed for surface mount applications with a compact SOIC package. Includes fast switching characteristics with a 9ns fall time, 15ns turn-on delay, and 26ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 70mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 2.25nF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 70mR |
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