SI7174DP-T1-GE3
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Краткое описание:
75V 60A N-CH MOSFET, 7mR Rds On, SOIC
Дополнительная информация
N-channel Power MOSFET featuring 75V drain-source voltage and 60A continuous drain current. Offers a low 7mΩ maximum drain-source on-resistance at a nominal 4.5V gate-source voltage. This surface-mount device is housed in an 8-pin SOIC package with dimensions of 5.89mm width, 4.9mm length, and 1.04mm height. Key switching characteristics include a 21ns turn-on delay and 12ns fall time, with a maximum power dissipation of 6.25W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7mR |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.77nF |
| Threshold Voltage | 4.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 21ns |
| Dual Supply Voltage | 75V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 7mR |
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