SI7178DP-T1-GE3
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Краткое описание:
N-CH MOSFET 100V 60A 14mR PPAK SO-8
Дополнительная информация
N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 14mΩ drain-source on-resistance and 6.25W maximum power dissipation. Operates from -55°C to 150°C, with a nominal gate-source voltage of 4.5V and a maximum of 20V. Packaged in a PPAK SO-8 surface-mount format, this RoHS compliant component offers fast switching with turn-on delay of 21ns and fall time of 11ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Nominal Vgs | 4.5V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.87nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | 4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14mR |
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