SI7216DN-T1-E3

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SI7216DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 40V 6.5A 32mR 2-Ch SMT PowerPAK
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET with 40V drain-source voltage and 6.5A continuous drain current. Features low 32mΩ drain-source on-resistance and 2.5W power dissipation. Operates from -50°C to 150°C, with 9ns turn-on and 19ns turn-off delay times. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 5ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 32mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 670pF
Power Dissipation 2.5W
Threshold Voltage 3V
Number of Channels 2
Number of Elements 2
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 32mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 40mR

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