SI7218DN-T1-E3
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Краткое описание:
30V 8A N-CH MOSFET Module 25mR RdsOn
Дополнительная информация
N-channel MOSFET module featuring 30V drain-source breakdown voltage and 8A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance and 23W maximum power dissipation. Designed for surface mounting with a compact 3.05mm x 3.05mm x 1.04mm package. Includes fast switching characteristics with 10ns fall time and 15ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | Module |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 700pF |
| Power Dissipation | 23W |
| Number of Channels | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Max Power Dissipation | 23W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 30V |
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