SI7220DN-T1-GE3
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Краткое описание:
N-CH MOSFET 60V 3.4A 60mR 2-Ch Surface Mount
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage and 3.4A continuous drain current. Features 60mΩ drain-to-source resistance and 1.3W maximum power dissipation. Operates across a -55°C to 150°C temperature range. This surface-mount component is packaged in a 3.05mm x 3.05mm x 1.04mm PowerPAK 1212, supplied on tape and reel. Includes 2 N-channel FETs with 10ns turn-on delay and 20ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Voltage (Vdss) | 60V |
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