SI7230DN-T1-E3

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SI7230DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 9A 12mR 1.5W Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 9A continuous drain current. Features 12mΩ maximum drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. This surface-mount component, packaged on tape and reel, offers fast switching with a 10ns fall time, 13ns turn-on delay, and 33ns turn-off delay.
RoHS Compliant
Mount Surface Mount
Width 3.3mm
Height 1.04mm
Length 3.3mm
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 12mR
RoHS Compliant Yes
Package Quantity 3000
Number of Channels 1
Turn-On Delay Time 13ns
Radiation Hardening No
Turn-Off Delay Time 33ns
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 12mR

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