SI7234DP-T1-GE3
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Краткое описание:
12V 60A N-CH MOSFET, 3.4mR Rds(on), 2-Ch, SOIC
Дополнительная информация
N-Channel MOSFET with 12V Drain-Source Voltage (Vdss) and 60A Continuous Drain Current (ID). Features a low Drain-Source On Resistance (Rds On) of 3.4mR, 2 N-Channel elements, and a 12V Gate to Source Voltage (Vgs). This surface-mount component operates within a temperature range of -55°C to 150°C, offering a maximum power dissipation of 46W. Packaged in an 8-pin PowerPAK SO for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.4mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5nF |
| Power Dissipation | 3.5W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Max Power Dissipation | 46W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 3.4mR |
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