SI7236DP-T1-GE3
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Краткое описание:
2 N-Ch MOSFET, 20V, 20.7A, 5.2mR Rds On, SOIC
Дополнительная информация
N-Channel MOSFET, 20V Drain-Source Voltage, 20.7A Continuous Drain Current, and 5.2mΩ Drain-Source Resistance. Features 2 N-Channel FETs with a 12V Gate-Source Voltage and 4nF Input Capacitance. Surface mountable in an 8-SOIC package, this component offers a maximum power dissipation of 46W and operates from -55°C to 150°C. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4nF |
| Power Dissipation | 3.5W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 46W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.2mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Voltage (Vdss) | 20V |
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