SI7308DN-T1-GE3
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Краткое описание:
60V 6A N-CH MOSFET, 58mR Rds On, 3.2W PD, Surface Mount
Дополнительная информация
N-channel MOSFET transistor, 60V drain-source voltage, 6A continuous drain current, and 58mΩ maximum drain-source on-resistance. Features include a 3V threshold voltage, 10ns turn-on delay, 20ns turn-off delay, and 10ns fall time. This surface-mount component operates from -55°C to 150°C, with a maximum power dissipation of 3.2W. Packaged in Tape and Reel, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 665pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 58mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 58MR |
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