SI7309DN-T1-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 60V 3.9A 115mR PwrPAK 1212
Дополнительная информация
P-channel MOSFET with 60V drain-to-source voltage and 3.9A continuous drain current. Features low 115mΩ drain-to-source resistance and 10ns turn-on delay. Operates from -65°C to 150°C with a maximum power dissipation of 3.2W. This surface-mount component is housed in an 8-pin PowerPAK 1212 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 33ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 600pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
