SI7336ADP-T1-GE3
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Краткое описание:
30V 30A N-CH MOSFET 3mR RdsOn 5.4W
Дополнительная информация
N-CHANNEL MOSFET with 30V Drain-Source Voltage and 30A Continuous Drain Current. Features low 3mR Drain-to-Source Resistance at 10V Vgs. Offers 5.4W Max Power Dissipation and 150°C Max Operating Temperature. Surface mount package with 5.89mm width, 4.9mm length, and 1.04mm height. RoHS compliant with fast switching times including 24ns Turn-On Delay and 32ns Fall Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.6nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
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