SI7390DP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 9A 9.5mR 1.8W Surface Mount
Дополнительная информация
The SI7390DP-T1-GE3 is a single N-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 9A and a drain to source resistance of 9.5mR. The device is packaged in a surface mount package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 30V |
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