SI7414DN-T1-E3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 60V 5.6A 25mR SMT PowerPAK
Дополнительная информация
N-channel MOSFET with 60V drain-source breakdown voltage and 5.6A continuous drain current. Features low 25mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. This surface-mount component offers fast switching with turn-on delay of 15ns and fall time of 12ns. Operating temperature range spans -55°C to 150°C with 1.5W maximum power dissipation. Packaged in Tape and Reel, this RoHS compliant device is ideal for power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 3V |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
