SI7415DN-T1-E3
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Краткое описание:
P-CH MOSFET, -60V, 3.6A, 65mR, 1.5W, SMT
Дополнительная информация
P-channel MOSFET with -60V drain-source breakdown voltage and 3.6A continuous drain current. Features 65mΩ maximum drain-source on-resistance and 1.5W maximum power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. Surface mountable in an 8-pin PowerPAK 1212 package, this RoHS compliant component offers fast switching with turn-on delay of 12ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 65mR |
| Drain to Source Breakdown Voltage | -60V |
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