SI7415DN-T1-GE3
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Краткое описание:
P-CH MOSFET -60V 3.6A 65mR SOIC SMT
Дополнительная информация
P-channel MOSFET with a 60V drain-source voltage and 3.6A continuous drain current. Features a low 65mΩ drain-source on-resistance and a 1.5W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface-mount component is housed in an 8-pin PowerPAK 1212 package, offering fast switching with turn-on delay times of 12ns and fall times of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | -3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | -60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 65MR |
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