SI7430DP-T1-GE3
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Краткое описание:
150V N-CH MOSFET 45mR RdsOn 26A SOIC
Дополнительная информация
N-channel MOSFET transistor featuring 150V drain-source voltage (Vdss) and 26A continuous drain current (ID). Offers a low 45mΩ maximum drain-source on-resistance (Rds On) and 4.5V threshold voltage (Vgs(th)). Designed for surface mounting in an 8-pin SOIC package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5.2W. Key switching characteristics include a 16ns turn-on delay and 7ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SI7 |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.735nF |
| Threshold Voltage | 4.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 45mR |
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