SI7448DP-T1-E3
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Краткое описание:
N-Channel Power MOSFET, 20V, 13.4A, 6.5mR, SO-8
Дополнительная информация
N-channel power MOSFET with 20V drain-source voltage and 13.4A continuous drain current. Features 6.5mΩ maximum drain-source on-resistance and 1.9W maximum power dissipation. Operates from -55°C to 150°C with a 12V gate-source voltage. Surface mountable in a PowerPAK SO-8 package, this lead-free component offers fast switching with 22ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5mR |
| Nominal Vgs | 600mV |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 13.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6.5mR |
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