SI7450DP-T1-E3
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Краткое описание:
200V N-CH MOSFET, 5.3A, 80mR Rds On, Surface Mount
Дополнительная информация
N-channel Power MOSFET with 200V drain-source voltage and 5.3A continuous drain current. Features 80mΩ maximum drain-source on-resistance and 5.2W maximum power dissipation. Operates over a temperature range of -55°C to 150°C. Surface mountable in an 8-pin PowerPAK SO package, supplied on tape and reel. Includes 25ns fall time, 32ns turn-off delay, and 14ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Nominal Vgs | 2V |
| Current Rating | 5.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Power Dissipation | 1.9W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 80mR |
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