SI7461DP-T1-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET -60V, 8.6A, 14.5mR, SOIC, PwrPAK
Дополнительная информация
P-channel Power MOSFET with 60V drain-source voltage and 8.6A continuous drain current. Features low 14.5mΩ drain-source on-resistance and 1.9W maximum power dissipation. Surface mountable in an 8-pin SOIC package, this component offers fast switching with 20ns turn-on delay and 20ns fall time. Operating temperature range from -55°C to 150°C, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14.5mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.9W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 205ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 14.5mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
