SI7465DP-T1-GE3
Производится
Увеличить
Краткое описание:
P-CH MOSFET, -60V, 3.2A, 64mR RdsOn, SOIC
Дополнительная информация
P-channel MOSFET with 60V drain-source voltage and 3.2A continuous drain current. Features low 64mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-pin SOIC package, supplied on tape and reel. Includes fast switching characteristics with 8ns turn-on and 9ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 64mR |
| Nominal Vgs | -3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 64MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
