SI7478DP-T1-GE3
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Краткое описание:
60V 15A N-CH MOSFET 7.5mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring 60V drain-source voltage and 15A continuous drain current. Surface mountable in an 8-pin SOIC package, this component offers a low 7.5mΩ drain-source on-resistance. Operates with a nominal gate-source voltage of 3V and boasts fast switching times with a 25ns turn-on delay and 20ns fall time. Maximum power dissipation is 1.9W, with an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | 3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5mR |
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