SI7485DP-T1-E3
Снят с производства
Увеличить
Краткое описание:
P-CH JFET 20V 12.5A 7.3mR SOIC Surface Mount
Дополнительная информация
P-channel MOSFET featuring 20V drain-source breakdown voltage and 12.5A continuous drain current. Offers low 7.3mΩ drain-source on-resistance and 1.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an SOIC package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Current | 20A |
| Voltage | 20V |
| Polarity | P-CHANNEL |
| Fall Time | 170ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.3mR |
| Nominal Vgs | -900mV |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.8W |
| Threshold Voltage | -900mV |
| Turn-On Delay Time | 80ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 360ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 7.3mR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
