SI7489DP-T1-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET, -100V, 7.8A, 41mR, SOIC, SMT
Дополнительная информация
P-channel PowerPAK SO surface-mount MOSFET with a -100V drain-source voltage and 7.8A continuous drain current. Features a low 41mΩ maximum drain-source on-resistance and 83W maximum power dissipation. Operates from -55°C to 150°C with a gate-source voltage of 20V. Includes a -3V threshold voltage and fast switching times with 42ns turn-on delay and 100ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 41mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.6nF |
| Power Dissipation | 83W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 42ns |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 41mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 41mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
