SI7617DN-T1-GE3
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Краткое описание:
P-CH MOSFET, -30V, -35A, 12.3mR, SMT
Дополнительная информация
P-channel PowerPAK 1212 MOSFET with -30V drain-source voltage and -35A continuous drain current. Features low 12.3mΩ drain-to-source resistance and 3.7W power dissipation. Operates from -55°C to 150°C with a 1.8nF input capacitance. Surface mountable, RoHS compliant, and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 3.7W |
| Threshold Voltage | -2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.3mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | -35A |
| Drain to Source Voltage (Vdss) | -30V |
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