SI7619DN-T1-GE3

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SI7619DN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 30V 24A 21mR 8-Pin PowerPAK 1212 SMT
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET with 30V drain-source voltage and 24A continuous drain current. Features low 17.5mΩ drain-source resistance and 21mΩ maximum Rds On. Operates from -55°C to 150°C with a maximum power dissipation of 27.8W. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 21mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.35nF
Number of Channels 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 45ns
Max Power Dissipation 27.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 17.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 24A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 21mR