SI7625DN-T1-GE3

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SI7625DN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, -30V, 35A, 7mR, 8-Pin PowerPAK
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET with -30V drain-source voltage and 35A continuous drain current. Features low 7mR drain-source on-resistance and 52W maximum power dissipation. Operates from -55°C to 150°C, suitable for surface mount applications. Packaged in tape and reel for automated assembly.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity P-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 7mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 4.427nF
Threshold Voltage -1V
Number of Channels 1
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 52W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) -30V
Drain-source On Resistance-Max 7MR

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