SI7633DP-T1-GE3
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Краткое описание:
P-CH MOSFET 20V 60A 3.3mR 104W Surface Mount
Дополнительная информация
P-channel MOSFET with 20V drain-source voltage and 60A continuous drain current. Features low 4.4mΩ drain-to-source resistance and 104W maximum power dissipation. Designed for surface mounting with a compact 5.89mm x 4.9mm x 1.04mm footprint. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 9.5nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 100ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 20V |
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