SI7634BDP-T1-GE3
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Краткое описание:
N-Ch MOSFET, 30V, 40A, 5.4mR, SMT
Дополнительная информация
N-Channel Power MOSFET featuring 30V drain-source voltage and 5.4mΩ maximum drain-source on-resistance. Delivers 40A continuous drain current with a maximum power dissipation of 48W. Surface mountable in a POWERPAK-SO-8 package, this component offers fast switching speeds with a 12ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.15nF |
| Threshold Voltage | 1.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 54mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.4mR |
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