SI7636DP-T1-E3
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Краткое описание:
N-CH MOSFET 30V 17A 4mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 17A continuous drain current. Features low 4mΩ drain-source on-resistance and 5.2W maximum power dissipation. Operates from -55°C to 150°C, packaged in SOIC for surface mounting. Includes fast switching times with 24ns turn-on and 32ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.6nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4mR |
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