SI7655DN-T1-GE3
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Краткое описание:
P-CH MOSFET, -20V, -40A, 3.6mR RdsOn, PPAK 1212
Дополнительная информация
P-channel MOSFET with -20V drain-source voltage and -40A continuous drain current. Features 3.6mΩ drain-to-source resistance and 12V gate-to-source voltage. Surface mountable in a PPAK 1212 package, offering 57W maximum power dissipation. Operates across a -50°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 0.78mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 3.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 6.6nF |
| Threshold Voltage | -500mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 57W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 3.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | -40A |
| Drain to Source Voltage (Vdss) | -20V |
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