SI7686DP-T1-GE3
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Краткое описание:
30V 17.9A N-CH MOSFET SOIC 9.5mR RdsOn
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 17.9A continuous drain current. Features low 9.5mΩ drain-to-source resistance and 1.22nF input capacitance. Operates within a -55°C to 150°C temperature range, with a 5W maximum power dissipation. Packaged in a surface-mount SOIC case, this component offers fast switching speeds with 13ns turn-on and 23ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.22nF |
| Power Dissipation | 5W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17.9A |
| Drain to Source Voltage (Vdss) | 30V |
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