SI7716ADN-T1-GE3

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SI7716ADN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 16A 13.5mR Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET transistor, 30V Vdss, 16A continuous drain current, and 13.5mR max Rds On. Features a 2.5V threshold voltage, 15ns turn-on delay, and 10ns fall time. Operates from -55°C to 150°C with a max power dissipation of 27.7W. Surface mountable in an 8-pin PowerPAK 1212 package. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 13.5mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 846pF
Threshold Voltage 2.5V
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 14ns
Reach SVHC Compliant No
Max Power Dissipation 27.7W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 13.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 13.5mR

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