SI7758DP-T1-GE3
Снят с производства
Увеличить
Краткое описание:
30V 34.6A N-CH MOSFET SOIC 2.9mR
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 34.6A continuous drain current. Features low 2.9mΩ drain-source on-resistance and 104W maximum power dissipation. Operates from -55°C to 150°C, with 53ns turn-on and 56ns turn-off delay times. Packaged in an 8-pin PowerPAK SO surface-mount configuration, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.9mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 7.15nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 56ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 34.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.9mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
