SI7784DP-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 35A 6mR SOIC
Дополнительная информация
N-CHANNEL MOSFET featuring 30V drain-source voltage and 35A continuous drain current. Offers low 6mΩ drain-source on-resistance at 10V gate-source voltage, with a maximum power dissipation of 5W. This surface mount component, housed in an SOIC package, exhibits a 2.5V threshold voltage and fast switching speeds with 22ns turn-on and 26ns turn-off delays. Operating temperature range spans -55°C to 150°C, and it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.6nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6mR |
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