SI7804DN-T1-E3
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Краткое описание:
30V 6.5A N-CH MOSFET 18.5mR 8-Pin PowerPAK
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 6.5A continuous drain current. Features a low 18.5mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a compact 3.05mm x 3.05mm x 1.04mm package, this component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18.5mR |
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