SI7812DN-T1-E3

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SI7812DN-T1-E3 - Vishay(Siliconix)
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Краткое описание: 75V 7.2A N-CH MOSFET, 37mR Rds On, PowerPAK 1212
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET transistor for surface mount applications. Features a 75V drain-source voltage and 7.2A continuous drain current. Offers a low 37mΩ drain-source on-resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 52W. Packaged in tape and reel for automated assembly.
RoHS Compliant
Mount Surface Mount
Width 3.05mm
Height 1.04mm
Length 3.05mm
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 37mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 840pF
Power Dissipation 3.8W
Threshold Voltage 2.3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant No
Max Power Dissipation 52W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 37mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.2A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 37mR

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