SI7850DP-T1-E3
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Краткое описание:
60V 6.2A N-CH MOSFET, 22mR Rds On, SOIC
Дополнительная информация
N-channel MOSFET transistor for surface mount applications. Features 60V drain-source breakdown voltage and 6.2A continuous drain current. Offers low 22mΩ drain-source on-resistance at a nominal gate-source voltage of 3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in an 8-pin SOIC PowerPAK with tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.8W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 60V |
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